Outline

The host of the ITC57300 dynamic parameter test system can be equipped with different test heads to perform non-destructive tests on semiconductor devices such as MOSFTs, IGBT, Diodes and other bipolar devices (additional bias power supply and customized personality board are required). The host computer contains various testers and software required for testing and analyzing resistive/inductive switching time, switching loss, gate charge, Trr/Qrr and other tests.

Although the design of each test head is different, it can be simply and quickly installed on the host. Although each test head is designed for a certain parameter test, its matched personality board can reassemble the test head to match different types of devices, package models and device circuits.

Function

·Test voltage: 1200V Vdc at most, 200A (short circuit test Isc at most: 1000A)

·Time measurement: minimum 1ns

·Leakage current limit monitoring

Existing test head

ITC57210 - Power device MOSFETs, P and N channel switching time test head, MIL-STD-750, Method 3472

ITC57220 - Power device MOSFETs and diode reverse recovery Trr/Qrr test head, American standard MIL-STD-750, Method 3473

ITC57230 - MOSFETs gate charge test head for power devices, MIL-STD-750, Method 3471

ITC57240 - IGBT inductive load switch time test head, American standard MIL-STD-750, Method 3477

ITC57250 - Short circuit current tolerance test head, American standard MIL-STD-750, Method 3479

ITC57260 - Junction capacitance/grid equivalent resistance test head, standard JEDEC Standard JESD24-11